High-k Gate Dielectrics for CMOS Technology by Gang He, Zhaoqi Sun

By Gang He, Zhaoqi Sun

A state of the art evaluate of high-k dielectric fabrics for complicated field-effect transistors, from either a primary and a technological perspective, summarizing the most recent learn effects and improvement suggestions.
As such, the e-book basically discusses some great benefits of those fabrics over traditional fabrics and in addition addresses the problems that accompany their integration into present creation applied sciences. subject matters lined comprise downscaling limits of present transistor designs, deposition ideas for high-k dielectric fabrics, electric characterization of the ensuing units, and an outlook in the direction of destiny transistor stacking technology.
aimed toward academia and alike, this monograph combines introductory components for newbies to the sector in addition to complex sections with at once acceptable recommendations for knowledgeable researchers and builders in fabrics technology, physics and electric engineering.

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J. NonCryst. Solids, 353, 630. , and Heyns, M. (2005). High performing 8 angstrom EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions. Symposium on VLSI Technology Digest, p. 234. S. (2005) Characterization of CF4plasma fluorinated HfO2 gate dielectrics with TaN metal gate. Appl. Phys. , 86, 222905. , and Toriumi, A. (2005) Permittivity increase of yttrium-doped HfO2 through structural phase transformation. Appl. Phys. , 86, 102906. , and Zaumseil, P.

J. NonCryst. Solids, 353, 630. , and Heyns, M. (2005). High performing 8 angstrom EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions. Symposium on VLSI Technology Digest, p. 234. S. (2005) Characterization of CF4plasma fluorinated HfO2 gate dielectrics with TaN metal gate. Appl. Phys. , 86, 222905. , and Toriumi, A. (2005) Permittivity increase of yttrium-doped HfO2 through structural phase transformation. Appl. Phys. , 86, 102906. , and Zaumseil, P.

1974) Design of ionimplanted MOSFETs with very small physical dimensions. IEEE J. Solid St. , SC-9, 256. R. G. (1960) The mechanisms for silicon oxidation in steam and oxygen. J. Phys. Chem. Solids, 14, 131. R. G. (1961) Effects of crystal orientation on oxidation rates of silicon in high pressure steam. J. Phys. , 65, 2011. Hoeneisen, B. A. (1972) Fundamental limitations in microelectronics-I. MOS technology. , 15, 819. T. (1975) Fundamental physical limitations in integrated electronic circuits.

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