By Michel Houssa
The force towards smaller and smaller digital componentry has large implications for the fabrics at the moment getting used. As quantum mechanical results start to dominate, traditional fabrics won't be able to operate at scales a lot smaller than these in present use. for that reason, new fabrics with better electric permittivity should be required, making this can be a topic of extensive examine job in the microelectronics community.High ok Gate Dielectrics experiences the state of the art in excessive permittivity gate dielectric study. which includes contributions from prime researchers from Europe and the united states, the booklet first describes many of the deposition ideas used for development of layers at those dimensions. It then considers characterization strategies of the actual, chemical, structural, and digital homes of those fabrics. The e-book additionally experiences the theoretical paintings performed within the box and concludes with technological purposes.
Read Online or Download High-K Gate Dielectrics PDF
Similar materials & material science books
Complex-Shaped Metal Nanoparticles: Bottom-Up Syntheses and Applications
Content material: bankruptcy 1 Colloidal Synthesis of Noble steel Nanoparticles of complicated Morphologies (pages 7–90): Prof. Tapan okay. Sau and Prof. Andrey L. RogachChapter 2 Controlling Morphology in Noble steel Nanoparticles through Templating procedure (pages 91–116): Chun? Hua Cui and Shu? Hong YuChapter three form? managed Synthesis of steel Nanoparticles of excessive floor power and Their purposes in Electrocatalysis (pages 117–165): Na Tian, Yu?
Advanced Fibrous Composite Materials for Ballistic Protection
Complicated Fibrous Composite fabrics for Ballistic safety presents the newest info on ballistic security, a subject that continues to be a major factor nowa days as a result of ever expanding threats coming from neighborhood conflicts, terrorism, and anti-social habit. the fundamental standards for ballistic safety gear are at the start, the prevention of a projectile from perforating, the relief of blunt trauma to the human physique attributable to ballistic effect, the need that they're thermal and supply moisture convenience, and they are light-weight and versatile to assure wearer’s mobility.
- Stainless Steels for Design Engineers
- Plasma Chemistry and Catalysis in Gases and Liquids
- Modern trends in the theory of condensed matter, Edition: Proc. Karpacz
- A Practical Guide to Transmission Electron Microscopy, Volume II: Advanced Microscopy
- Machinability of Advanced Materials (Materials Science)
- Industrial Ceramics, 1st Edition
Additional info for High-K Gate Dielectrics
Example text
Reproduced by permission of The Electrochemical Society, Inc. from Gusev E P et al 2001 Electrochem. Soc. Proc. 5 nm, thereby implying that the interface layer is not SiO2 but a mixture of zirconium and silicon oxides. At this point it must be emphasized that the examination of the interfaces formed in the high-k oxide deposition processes is complicated because the interface layers may also grow in thickness afterwards when the samples are stored in air. 13. Cross-sectional TEM image of a ZrO2 film deposited on hydrogen terminated silicon from Zr(NEt2)4 with oxygen plasma enhanced ALD.
The second issue to be considered is how the silicon surface is treated prior to the high-k oxide deposition. The starting surfaces for ALD of high-k gate oxides have been either ultrathin oxide or nitride layers or hydrogen terminated silicon. The oxide and nitride layers are commonly formed by first etching away the native oxide layer followed by controlled oxidation or nitridation. The oxide layer may be formed by thermal oxidation or by low temperature treatment with aqueous solutions containing ozone or hydrogen peroxide, for example.
An example related to the high-k gate oxides is etching of niobium oxide by niobium chloride through formation of niobium oxychloride: Nb2 O5 ðsÞ þ 3NbCl5 ðgÞ ! 5NbOCl3 ðgÞ As a consequence, it is impossible to deposit Nb2O5 from NbCl5 [12]. A similar etching reaction takes place also between Ta2O5 and TaCl5 but only above 3008C so that the TaCl5 – H2O process may be used below this temperature [13, 14]. A somewhat different and less detrimental side reaction occasionally found in deposition of multicomponent materials is an exchange of cations between the metal precursor and the oxide upon which it is dosed [15]: 3TiO2 ðsÞ þ 4AlCl3 ðgÞ !